Error Analysis and Adaptable Error-correct Scheme for NAND Flash Memory

YU-QIAN PAN, ZHENG-LIN LIU

Abstract


With the continuous scaling of NAND flash memory process technology, the traditional solution for endurance enhancement is incapable of meeting the demands for NAND flash memory reliability. It's necessary to design an effective algorithm to overcome this problem. In this paper, we investigated the error characteristics under various types of flash operations to build a well understanding of the memory failure mechanism. On the foundation of the error analysis, we propose a new adaptive error correction algorithm. The algorithm can extend the lifetime of flash memory by employing error-correct methods adaptively with low hardware resource-cost.

Keywords


NAND flash, Error correction, Error mechanism.


DOI
10.12783/dtcse/cimns2017/17396

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