Review on Phase-field Simulation on PVD
Abstract
This article briefly reviews recent applications of the phase-field method on PVD of thin films. It starts with a brief introduction to the phase-field method and the Physical Vapor Deposition. The solution of the partial differential equations yields the temporal evolution of the phase-field variables are presented, including the Ginzburg–Landau equation and Cahn–Hilliard equation, then introduces the free energy functional and historical evolution of phase-field method. Thin films are usually grown using physical vapor deposition (PVD) techniques, where the precise deposition conditions and materials used strongly influence the surface morphology and underlying microstructure that arises during processing. Computational methods are often used in conjunction with experimental observations due to the many complicated and nonlinear evolution processes. Development of the phase-field method has provided a simple yet powerful tool for simulating and studying many materials evolution processes. As such, the phase field method provides a unique and versatile technique for investigating the effects of PVD conditions on thin film microstructure formation and evolution.
DOI
10.12783/dtcse/icmsie2017/18680
10.12783/dtcse/icmsie2017/18680
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