2D-simulation of Inverted Metamorphic GaInP/GaAs/In0.3Ga0.7As/In0.58Ga0.42As Four-junction Solar Cell

Dan Xue, Jielei Tu, Wangfu Lai, Wei Zhang, Yuqing Sheng, Tengteng Guo

Abstract


In the paper, based on the Crosslight APSYS, two-dimensional simulation has been performed on the GaInP/GaAs/In0.3Ga0.7As/In0.58Ga0.42As four-junction solar cell. The optimized performance was shown as following: Voc=3540mV，Jsc=20.08 mA/cm2，FF=0.88，Eff=47.8%. And the comparison with the exhibition （ Voc=3301mV ， Jsc=17.33 mA/cm2 ， FF=0.834 ， Eff=34.87%）of a practical cell with the optimized structure was carried out as well. The reason could be come from anti-reflect film, pattern of front contact, voltage decrease of tunnel-junction and preparation proceeding.

Keywords


APSYS; GaInP/GaAs/InGaAs/InGaAs four-junction solar cell; theoretical simulation

Publication Date


2016-11-18 00:00:00


DOI
10.12783/dteees/peee2016/3836

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