Research on Modeling Simulation and Parameters Extraction of IGBT

Abstract

IGBT is the key component of electric vehicle motor control system. In order to control IGBT and motor accurately and effectively, the structure of MOSFET and N-IGBT is given based on semiconductor principle. The four-layer PNPN structure of IGBT is analyzed. The equivalent circuit model of IGBT based on MOSFET, PNP and NPN transistor is established. Combining with Infineon IGBT chip and its application data, the collector current transmission characteristic curves under different gate source voltages and environment temperature are given. The simulation method of the same characteristic curves can be obtained by setting IGBT micro-variable equivalent circuit model parameters using Q3D and Simplorer. The model parameters such as parasitic capacitance, parasitic inductance, junction resistance and so on of the IGBT chip are determined and extracted. Thus the accurate model of IGBT chip is established. The simulation results show that the modeling and parameters extraction methods can effectively extract the precise parameters of IGBT, and can provide precise data for the analysis and establishment of the equivalent circuit model of IGBT.